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About Us
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CEO's Speech
Main evolution
Products
Power MOSFET
IGBT
Diode
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TIONER Semiconductor Co., Ltd
Innovators of power semiconductor devices
Power MOSFET
IGBT
Diode
BJT
IC
IGBT
Products
IGBT
Products
VDS(V)
100
200
250
300
400
500
600
650
700
800
900
1000
1200
ID(A)
60
30
20
18
16
13
12
10
9
8
7
6
5
4
3
2
1
RDSON(mΩ)(@Vgs=10V)
110
16
15
10.5
10
9.5
8
6.5
6.3
6
5.5
5
4.8
4.5
3.4
3
2.8
2.5
2.3
2.2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.25
1.2
1.15
1.1
1.05
1
0.9
0.85
0.8
0.75
0.7
0.56
0.55
0.5
0.45
0.4
0.35
0.3
0.28
0.27
0.26
0.25
0.18
0.12
0.094
0.085
0.08
0.066
0.051
0.05
0.046
0.042
VGS(TH)(V)
4-5
3-5
2-4
1-3
QG(nC)
153
140.5
136.2
123
96
90.5
90.1
65
64
63
62
61
58
57
56.9
54
52
50.5
50
49.4
49.3
49
47
46.9
46
45.7
45
44
43
42
40
39
38.6
38
37.6
37.1
35
34
33.9
32
31.1
30.1
29
28.4
28
27
26.5
26
25.4
25.2
25
24
23
22.7
21.3
21
20.4
20.2
19.7
19.5
19
18.6
18
17.4
17.3
16.6
16
15.5
15
14.6
14.5
13.4
13
12.8
12.7
12.6
12.3
12
11.5
11.2
9.5
9.4
9
8.8
8.7
8.5
8.4
8
7.9
7
6.2
5.3
5.2
5
4.7
4.3
4.2
4
3.6
Encapsulation form
TO-3P(H)
TO-3P
TO-220F
TO-220AB
TO-252
TO-251
Specification
State
Update
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